Size and emission wavelength control of InAs/ InP quantum wires

For a certain heteroepitaxial system, the optical properties of self-assembled nanostructures basically depend on their size. In this work, we have studied different ways to modify the height of InAs/ InP quantum wires QWrs in order to change the photoluminescence emission wavelength. One procedure consists of changing the QWr size by varying the amount of InAs deposited. The other two methods explored rely on the control of As/P exchange process, in one case during growth of InAs on InP for QWr formation and in the other case during growth of InP on InAs for QWr capping. The combination of the three approaches provides a fine tuning of QWr emission wavelength between 1.2 and 1.9 m at room temperature. © 2005 American Institute of Physics. DOI: 10.1063/1.1996307